CIA Reading Room cia rdp86 00513r000515420004 0 pdf

CIA Reading Room cia rdp86 00513r000515420004 0

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FrincipleE- of utomati,- qualitY fornudio~r(;-,dcast ing a pparat u a. I zv . vys n Ile kh.1. Re;~omandovan-i ~mfeJroy rudlovesinchaniya 1 aku:,ti,~4 Hoskovskoggoelekt rot rhnicheskogo instituta .13VIlla-.i.(Information theor-.,,) 0,;4rbromicastine)GLUKHOV, A.A.Study of the effect of phase distortionc on tfie J-n9tantm,,eouc valueof the signal in the radio broadcast ng channel. rKlek~rojjviazl 15no.1:33-39 Ja 161. (Information theory) 14:3)GLUKIIOV, A. A.Cand Tech- l’)’ci – (diss) “Problua~s of -he auco::’nuic corl-.rol- of thequalit,y of Performance of broadcasting, equip-ment.” No,~-covj, 1961 .14 pp; with -illustrations; (Mird~itry of Commuric,titiorl:z FOS-cow Electrical Em-lineer-irig, Inst of Communic–itionizi; ll:C copies:price not ~.ivun-, (KL, 6-61 sup,I lov!7 1,;7A ~llilj,,,,~-,,J-j;,,l nc) i~) C,-ho!:lo llyl~ I, llh~,f 1~:fc%v an monitor, -in valich on,~ onty crt~ `u-)~ -vrcfo–~zor i,oron f-w M.,;viot–hloc.Ul Lt~y”T’ic D~,c’,a:i ‘-)rLn:, Lp-‘ L :IJj..f”.-1:.,:,.-: ‘,-* :’,! ” T I o “‘. ` ” 5 , -. , a ,. ~ –r – (I ~ .-n 4,1r.– ~;- I t-, I ~’,L 0-!-F*L;~ – .

,~ hr~L – – – –f- – I I – ~ TIT r )D!P – —- ——_. ……..SOURCECODE: I 1R/0363/6(/MV/00~’/ “?,115/02118AVI’HOR: Kharakhorin, F. F.; Glukhov, A. A.; Kuznetsova, Ye. S.i Potily-ov, V. 1. -ORG: noneTITLE: Some properties of tellurium doped Indium and gallium arsenides. ….. …..SOURCE: AN SSSR. Izvestiya. Neorganicheskiye inaterialy,’v. 2, no. 2, 1966,245-248TOPIC TAGS, semiconducting material, gallium at-serilde, fildhio coml)ound, Indfumarsenide, single crystal, electric property, acl.lvated crystal, tellurium activn:torABSTRACT: Electron carrier concentration in relation to To dt~pant conitent in thecharge and Hall mobility of electrons 1.n reLation 1~o the, carrJer conCi!-ntr~,tionhave been studied in indium, arsenide and gallium arsenide tsinj:-,le cryslalsl .1 grown bythe Czochralski-Gremmelmayer technique and, in the case oF_0,ij7s_,by’Fi-Te`Et ed crystal-,!’lization. This latter technique was used to exclude interference of Si acceptorimpurity (from the quartz container) with electrical characteristics of GaAs. Inthe Czochralski process, 99,999% Te was introduced directly into the Melt. Hallcoefficient and resistivity were measured at 300K.

In both indium and galliumarsenides, earrier concentration increased wffb the increase in To content of the chargeup to a certain value (11saturation” point), then leveled off. However, the “satura-tion” point was reached with ten times higher Te content in IWis than in GaAs.’-ard llg UDC: 546-682’191+546. 6611191+5h6.24ACC NR;Consequently, the limit (maximum) carrier concentration was a”,Jaut zai order ofmagnitude higher in InAs than in GaAs (,-2 x 10 19 versus 3. 1 x 10 18 at/cc) .Thesedata were in satisfactory agreement with the literature. Presumably, the “satura-tion” in carrier concentration was reached at a point when Te atoms form electricallyinactive Te-Te bonds. The Hall mobility in both arsenides atudied dif3pl4yed asimilar pattern of gradual decrease with increased concentration. A wide dispersionof mobility data at a given carrier concentration for GaAs crystals, prepared byCzochralski technique and by oriented crystallization was explained by the com-pensating effect of the uncontrollable acceptor impurity. Orig. art.

has: 5 flg~ures. [JKJ 1SUB CODE: 9-0 SUBM DATE- l2jul65/ ORIG REF: 002/ OTH REV: 007f ATD PRESS:.Rire inetal ‘f q,~ACC imll,:`. A260 1 j ;1 0 Lf R -~f R I o I f 6AUTHOR Kha ra khor J.n F F L IZ 11 i! 4. I~ V (I Y 1:, 0 vGlukhov , A . AORG: 110 n 1~T Url’ 17 Re 1.3 Lion beLweell mob Ll [tv and concentra tit:-n of c.~. rr ‘hers illLadium arsenideSOURCF AN CSSR. Izvestiva. iviterluly, v. 2, no. 31966 , 461-46~TOPIC TAGS indium compound , ;irn F~nf.do, Indium ir-:;ontdv, vcmicon~!uctorsingle cryot;iI, electron mob LIlry

• Creator/s: CIA Reading Room
• Date: 12/31/1967
• Book Topics/Themes: CIA Reading Room

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