DTIC AD0403366: PEM FOR TRANSISTOR MANUFACTURING PROCESS pdf

DTIC AD0403366: PEM FOR TRANSISTOR MANUFACTURING PROCESS

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The final design of the pilot line jet etch transistor type 2N501A is reported complete. An evaluation of emitter and collector lead wires has been completed and an evaluation of metager manic surface treatment has been completed. No benefit to diode stability was demonstrated; in fact, it was determined that metagermanic acid is detrimental to yield for this type of device. The hot sealing oven has been installed and is operating satisfactorily. Black painting as a final finish has been shown to improve the operating capability of the pilot line device and has been specified for this transistor. Modifications of the encapsulant dispensing equipment have been completed. Evaluation of the thermal resistance measurements by the continuous d-c VEB method has shown that a value in close agreement with the effective thermal resistance of the transistor can be obtained. Verification of the slope of the failure rate curve, as proposed in the Second Quarterly Report, has been obtained.

This verification was obtained on production run transistors equivalent to the type being manufactured in conjuction with this program

• Creator/s: Defense Technical Information Center
• Date: 1/31/1963
• Year: 1963
• Book Topics/Themes: DTIC Archive, Sanders, J, PHILCO CORP LANSDALE PA, *TRANSISTORS, MANUFACTURING, VERIFICATION, TEST EQUIPMENT, ELECTRODES, THERMAL RESISTANCE, GERMANIUM COMPOUNDS, ENCAPSULATION, GOLD, RELIABILITY(ELECTRONICS), SILVER

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