DTIC AD0410224: HIGH EFFICIENCY TRANSISTOR STRUCTURES pdf

DTIC AD0410224: HIGH EFFICIENCY TRANSISTOR STRUCTURES

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Component development continued and circuit development started, especially in the digital area. The linear circuit development is delayed somewhat because the induced-channel field-effect transistor does not have the temperature stability required. Induced-channel field-effect transistors, lead glass capacitors, and aluminum silicon resistors were fabricated and de- emphasized because of instability and failures in life tests. Tantalum- Molybdenum resistors were fabricated and will be used in future design. Diffused field-effect transistors were fabricated but the IDO was not low enough. Units did not have the back gates isolated. Circuit design progressed in the digital area to the point of applying components to a specific layout. Linear circuit design was begun during this quarter

• Creator/s: Defense Technical Information Center
• Date: 12/18/1962
• Year: 1962
• Book Topics/Themes: DTIC Archive, Luecke, Gerald, TEXAS INSTRUMENTS INC DALLAS, *TRANSISTORS, *FIXED CAPACITORS, *FIXED RESISTORS, TEMPERATURE, STABILITY, ALUMINUM COMPOUNDS, MANUFACTURING, COMPUTER LOGIC, METAL FILMS, MOLYBDENUM, DIELECTRIC FILMS, GLASS, BONDING, LEAD COMPOUNDS, DIFFUSION, SILICON COMPOUNDS, TANTALUM, SWITCHING CIRCUITS, DIOXIDES, PHOTOENGRAVING

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