DTIC ADA036244: Raman Scattering Studies of the pdf

DTIC ADA036244: Raman Scattering Studies of the

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Oxide films grown by heat treatment on the 100 and 111 faces of GaAs have been studied by Raman backscattering. A spectra consisting of the bulk LO and TO lines of GaAs and two additional lines labeled R1 and R2 is observed on all samples prepared at temperatures above 435 C. The additional modes are attributed to an interface region of perhaps several hundred angstroms thickness beneath the oxide film

• Creator/s: Defense Technical Information Center
• Date: 2/24/1977
• Year: 1977
• Book Topics/Themes: DTIC Archive, Cape, J A, Tennant, W E, Hale, L G, ROCKWELL INTERNATIONAL THOUSAND OAKS CALIF SCIENCE CENTER, *GALLIUM ARSENIDES, *BACKSCATTERING, *RAMAN SPECTRA, CRYSTAL STRUCTURE, INTERFACES, GROWTH(GENERAL), THIN FILMS, HEAT TREATMENT, OXIDES, SURFACE CHEMISTRY, PASSIVITY

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