DTIC ADA073421: The Preparation and Characterization of pdf

DTIC ADA073421: The Preparation and Characterization of

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This report summarizes the results of a two-year investigation of the viability of electrodeposition as a means of preparing indium phosphide, ultimately for electronic device applications. InP proved to be a difficult material to prepare by this technique, mainly because of the restrictions imposed on the maximum temperature of deposition by decomposition of InP and volatilization of In2O3 solute. A major portion of the total effort was spent on finding an optimum solvent to meet the requirement that the maximum deposition temperature should not exceed 600 C, and the Na,K/PO3,F quaternary eutectic was found to give best results. Reproducible InP deposits of fairly uniform thickness were made onto (0001) single crystal CdS substrates at potentials of -0.90 to 1.00V (versus graphite) with current densities of 1-3mA/sq cm. In spite of these low current densities, deposits thicker than 1 micron were found to be polycrystalline. The purity of the deposits was not sufficiently high for device applications, but a marked improvement with length of deposition time was demonstrated.

Deposits of InP on (111) InP substrates were also polycrystalline and of less uniform thickness

• Creator/s: Defense Technical Information Center
• Date: 6/1/1979
• Year: 1979
• Book Topics/Themes: DTIC Archive, Feigelson, Robert S, STANFORD UNIV CALIF CENTER FOR MATERIALS RESEARCH, *EPITAXIAL GROWTH, *INDIUM PHOSPHIDES, *ELECTRODEPOSITION, SINGLE CRYSTALS, SUBSTRATES, SOLVENTS, GROUP III COMPOUNDS, GROUP V COMPOUNDS, POLYCRYSTALLINE, MOLTEN SALTS

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