DTIC ADA1028894: Epitaxial Growth of GeGaAs pdf

DTIC ADA1028894: Epitaxial Growth of GeGaAs

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Description of the Book:

This final report summarizes the results of a 4-year research effort; the first two years of which were on liquid phase epitaxial and MBE approaches and the last two years were on the plasma-enhanced CVD technique. The primary conclusions of this work are that: for the LPE technique, in spite of careful control of the kinetic factors, the thermodynamic instabilities at the melt-seed interface are dominant at the initiation of growth. This results in dissolution of a few monolayers of GaAs and subsequent autodoping in the Ge single crystal. However, the purity of the Ge layers was greatly improved by using the Plasma-Enhanced CVD technique. P-type layers with p approx 10 to the 16th power cu cm and p approx. 1500 sq cm/V-s have been achieved. Mirror smooth layers with sharp interfaces are routinely obtained. Doping with volatile hydride is compatible with the PECVD technique. P-type layers doped with B2H6 to up to p approx 4 x 10 to the 19th power cu cm has been obtained.

In situ growth of multi-layer structures has also been demonstrated

• Creator/s: Defense Technical Information Center
• Date: 6/1/1981
• Year: 1981
• Book Topics/Themes: DTIC Archive, IP, Kwan T, ROCKWELL INTERNATIONAL THOUSAND OAKS CA ELECTRONICS RESEARCH CENTER, *GALLIUM ARSENIDES, *SINGLE CRYSTALS, *EPITAXIAL GROWTH, *GERMANIUM, INTERFACES, LAYERS, PLASMAS(PHYSICS), HETEROJUNCTIONS, MELTS, THERMAL STABILITY, VAPOR DEPOSITION, MOLECULAR BEAMS, LIQUID PHASES, DOPING, N TYPE SEMICONDUCTORS, TERNARY COMPOUNDS, P TYPE SEMICONDUCTORS

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