DTIC ADA1050307: Study of the Physics of pdf

DTIC ADA1050307: Study of the Physics of

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These papers discuss electron trapping on sites related to H2O, the subsequent interface states generated by the trapping, and the reduction of these traps by high temperature nitrogen annealing. Radiation induced neutral trapping centers are discussed in relation to electron or hole capital on them. A new electrically alterable memory device using a dual electron injector structure composed of silicon-rich silicon dioxide and silicon dioxide layers is described. Material characterization is the Fi-rich SiO subscript 2 film, discussed using attenuated total reflectance, raman scattering, and optical absorption measurements. Detection of trap impurities, on Fi surfaces is studied using electron trapping character techniques

• Creator/s: Defense Technical Information Center
• Date: 5/21/2020
• Year: 2020
• Book Topics/Themes: DTIC Archive, Aitken, John M, IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY, *INSULATION, *METAL OXIDE SEMICONDUCTORS, *RAMAN SPECTRA, *SEMICONDUCTING FILMS, ABSORPTION, ANNEALING, ELECTRONS, HIGH TEMPERATURE, LAYERS, LIGHT SCATTERING, MEASUREMENT, MEMORY DEVICES, OPTICS, REFLECTANCE, RELIABILITY, SILICON DIOXIDE, TRAPPING(CHARGED PARTICLES

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