DTIC ADA131934: Fabrication and Properties of Multilayer pdf

DTIC ADA131934: Fabrication and Properties of Multilayer

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The purpose of the work presented in this paper was to develop the reactive sputtering synthesis process so that continuous layers of controllable structure and composition could be formed in a reproduceable and routine manner. Refractory oxides were chosen as the class of materials to be studied. In this paper we report the results of our studies on the reactive deposition of the oxides of silicon (SiOX). Films of SiOX (0 x 2) were synthesized at high rates onto substrates held at room temperature. A systematic investigation of the structure-composition-synthesis process variables was conducted for this system and it was clearly demonstrated that films of controllable stoichiometry, varying over the range Si0.1 to Si02, (Ts approx 65 deg C). The low temperature nature of this process is a unique feature of high industrial potential as it provides a method for forming SiOX passivating films that does not include time-temperature cycling that could degrade existing device structures

• Creator/s: Defense Technical Information Center
• Date: 8/1/1983
• Year: 1983
• Book Topics/Themes: DTIC Archive, Tiller, William A, STANFORD UNIV CA DEPT OF MATERIALS SCIENCE AND ENGINEERING, *CRYSTALS, *FABRICATION, *INTEGRATED CIRCUITS, *LAYERS, *SILICATES, *STRUCTURAL PROPERTIES, *VAPOR DEPOSITION, COMPUTATIONS, COMPUTERIZED SIMULATION, CRYSTAL STRUCTURE, CRYSTALLOGRAPHY, FILMS, GASES, MICROSTRUCTURE, MOLECULAR ORBITALS, OXYGEN, QUALITY, REACTION KINETICS, REFRACTIVE INDEX, SEMICONDUCTORS, SILICON DIOXIDE, SPUTTERING, SYNTHESIS(CHEMISTRY), THERMAL PROPERTIES, THICKNESS

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