DTIC ADA145399: Electron Traps in the GaAs pdf

DTIC ADA145399: Electron Traps in the GaAs

More Book Details

Description of the Book:

An experimental study of deep level traps in the GaAs permeable base transistor (PBT) was carried out using current deep level transient spectroscopy (DLTS). This type of measurement was used because of its ability to detect electron traps in the base region of the PBT, the region most critical to device performance. The automated measurement system was able to capture the PBT current transients and store them for later analysis. With this system, the DLTS signal could be obtained for several rate windows with one thermal scan. The results of the DLTS measurements indicated a number of different deep level traps in the devices tested. The PBT devices tested were each fabricated in slightly different ways, and the differences in the traps detected were understandable. The forward voltage pulse used to fill the deep level traps was relatively high, and hole traps were observed as well as electron traps.

One hole trap which was common to three of the devices is thought to be related to the presence of copper in the GaAs around the base. Another hole trap found in one of the devices is thought to be due to iron

• Creator/s: Defense Technical Information Center
• Date: 6/1/1984
• Year: 1984
• Book Topics/Themes: DTIC Archive, Rienstra, J L, AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH, *TRANSISTORS, PERMEABILITY, GALLIUM ARSENIDES, ELECTRONS, TRAPS, DEEP DEPTH, BASES(TRANSISTORS

An excerpt captured from the PDF book