DTIC ADA147663: Electronic Structure of Semiconductor Interfaces pdf

DTIC ADA147663: Electronic Structure of Semiconductor Interfaces

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This report concerns theoretical studies of the electronic structure of various types of interfaces, including (a) interfaces between different semiconductors, such as Ge and GaAs; (b) interfaces between semiconductors and insulators, such as Si and Si02 (c) interfaces between metals and semiconductors, such as Pd2Si and Si; (d) interfaces between crystalline and amorphous semiconductors; and (e) interfaces between ferromagnetic and antiferromagnetic metals, such as Permalloy/MnFe and Co/Cr. The overall goal was to elucidate the inter-relationship between the atomic-scale structure of interfaces and their electronic, optical, and magnetic characteristics. For some of these systems, the effects of structural an chemical imperfectious on interfacial properties were taken into account explicitly. Theoretical results were related to relevant experimental information where possible. This Final general approach, the principal conclusions, and where the subject stands today. Additional information may be found in the six representative research papers and reviews that are reproduced in the Appendices

• Creator/s: Defense Technical Information Center
• Date: 11/1/1984
• Year: 1984
• Book Topics/Themes: DTIC Archive, Herman, F, IBM RESEARCH DIV SAN JOSE CALIF, *CRYSTAL STRUCTURE, *SEMICONDUCTORS, *ELECTRONIC STATES, *ATOMIC STRUCTURE, METALS, OPTICAL PROPERTIES, INTERFACES, LAYERS, SILICON DIOXIDE, CRYSTAL LATTICES, GALLIUM ARSENIDES, HETEROJUNCTIONS, AMORPHOUS MATERIALS, CRYSTALS, ATOMIC ORBITALS, SILICON, SCHOTTKY BARRIER DEVICES, GERMANIUM, PALLADIUM, FERROMAGNETIC MATERIALS, ANTIFERROMAGNETISM

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