DTIC ADA164380: X Band GaAs ISIS (Integrated pdf

DTIC ADA164380: X Band GaAs ISIS (Integrated

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Description of the Book:

The underlying purpose of this nine month program was to demonstrate the feasibility of synergistic power in Gallium Arsenide Integrated Series IMPATT Structures (ISIS). In order to demonstrate such a feasibility, the program entailed the following: Task 1: (a) Designing of appropriate doping profiles for GaAs X-band ISIS diodes; (b) Growing Integrated Series IMPATT Structures using Vapor Phase Epitaxy (VPE); and (c) Characterizing the doping profiles of the ISIS wafers. Task 2: (a) Processing ISIS wafers grown by VPE into single mesa diodes with integral heat sinks; (b) Processing ISIS wafers grown by Molecular Beam Epitaxy (to be provided by NRL) into single mesa diodes with integral heat sinks; and (c) Assembling diodes of (a) and (b) into standard packages compatible with coaxial mounts

• Creator/s: Defense Technical Information Center
• Date: 7/1/1985
• Year: 1985
• Book Topics/Themes: DTIC Archive, Dat, Rovindra, M/A-COM SEMICONDUCTOR PRODUCTS INC BURLINGTON MA, *EPITAXIAL GROWTH, *DOPING, *MESA DIODES, *IMPATT DIODES, INTEGRATED SYSTEMS, STRUCTURES, VAPOR PHASES, MOLECULAR BEAMS, PROFILES, POWER, SYNERGISM, SERIES(MATHEMATICS

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