DTIC ADA220236: Research on Development of Low pdf

DTIC ADA220236: Research on Development of Low

More Book Details

Description of the Book:

Several groups of wafers were implanted with nitrogen at the Naval Research Laboratory (H. Dietrich) and at the University of California,Santa Barbara (J. Merz). An n-type VPE wafer implanted at NRL with a dose of 3 x 10 to the 14th power ions/sq cm showed a p-type resistivity of approximately 2 x 10 to the 6th power ohm-cm after a 600 C/30 min anneal in nitrogen. This value is, of course, still very high, but preliminary measurements of the activation energy of the conductivity showed that an acceptor level about 0.7 eV deep was interfering with the conductivity (the strong negative effect of deep levels on conductivity has been recently calculated in this laboratory). This level may be due to some impurity or residual damage from the implantation. Higher temperature anneals are being tried in order to remove more of the implantation damage. The wafers implanted at UCSB and annealed at 800 C did show the photo- luminescence properties associated with nitrogen

• Creator/s: Defense Technical Information Center
• Date: 3/1/1981
• Year: 1981
• Book Topics/Themes: DTIC Archive, Fitzpatrick, B, PHILIPS LABS BRIARCLIFF MANOR NY, *ELECTRON ACCEPTORS, *P TYPE SEMICONDUCTORS, DAMAGE, RESISTANCE, IMPURITIES, NITROGEN, RESIDUALS, LOW LEVEL, NAVAL RESEARCH LABORATORIES, SEMICONDUCTOR JUNCTIONS, WAFERS, IMPLANTATION, ACTIVATION ENERGY, TEMPERATURE, ANNEALING

An excerpt captured from the PDF book