DTIC ADA252873: Novel Method for Chemical Vapor pdf

DTIC ADA252873: Novel Method for Chemical Vapor

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A novel method for chemical vapor deposition and atomic layer epitaxy using radical precursors under high vacuum conditions is being developed. The combination of selectively-generated radicals and high vacuum is ideal for low-temperature growth: growth rates remain relatively high because activation energies for radical reactions are typically small, and contamination and segregation are minimized by keeping the surface ‘capped’ by adsorbed intermediates and working under ultraclean conditions. Fluorine atoms are generated by thermal dissociation in a hot tube and abstract hydrogen atoms from precursor molecules injected immediately downstream of the source, generating radicals with complete chemical specificity. Preliminary results on growth of diamond films using the new method are presented

• Creator/s: Defense Technical Information Center
• Date: 6/29/1992
• Year: 1992
• Book Topics/Themes: DTIC Archive, Hukka, T I, RICE UNIV HOUSTON TX DEPT OF CHEMISTRY, *CHEMICAL REACTIONS, *LAYERS, *VAPOR DEPOSITION, *EPITAXIAL GROWTH, *ATOMIC STRUCTURE, SILICON, FLUORINE, HYDROGEN, ATOMS, DIAMONDS, SEMICONDUCTORS

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