DTIC ADA429220: A New Type of Silicon pdf

DTIC ADA429220: A New Type of Silicon

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This paper introduces a new type of superlattice, consisting of a semiconductor such as silicon sandwiched between adsorbed oxygen atoms. Compared to heterojunction quantum structures, this type of superlattice allows a wider variety of man-made solid because of tolerance to interfacial strain. Experimentally, Si/O superlattice is epitaxial with defect density below 10(exp 9)/sq cm. A 9-period structure shows electroluminescence with a peak at 2.2eV, and an effective barrier height of more than 0.5eV. Early on in this project, HRTEM has been exclusively used to demonstrate the epitaxy beyond the monolayer of oxygen introduced. A year ago, superlattice structure in the strain pattern demonstrated the extent of the interfacial strain, being at least four lattice dimension. This is a very important finding because researchers may now use the Semiconductor-Atomic Superlattice (SAS) as a matching section for the epitaxial growth of one with large strain onto the other. A frequently asked question is as follows: Do the oxygen atoms cover the entire 1 x 2 site?

If not, is there staggering present? Unfortunately, the answers to these questions may require in-situ STM probing, which may be something for future consideration. Technologically, this research opens the door for future 3D ICs. A list of 17 publications related to this research is included. (10 figures, 17 refs

• Creator/s: Defense Technical Information Center
• Date: 5/27/2003
• Year: 2003
• Book Topics/Themes: DTIC Archive, Tsu, Raphael, NORTH CAROLINA UNIV AT CHARLOTTE, *ADSORPTION, *SUPERLATTICES, *EPITAXIAL GROWTH, *SEMICONDUCTOR DEVICES, *ATOMS, *OXYGEN, *SILICON, QUANTUM THEORY, ELECTROLUMINESCENCE, HETEROJUNCTIONS, VOLTAGE, STRAIN(MECHANICS), DEPOSITION, DIFFRACTION, CRYSTAL DEFECTS, SPECTRUM ANALYSIS, NANOTECHNOLOGY

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