DTIC ADA432956: Semiconductor Radiation Physics: From Defects pdf

DTIC ADA432956: Semiconductor Radiation Physics: From Defects

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Description of the Book:

Radiation effects have been a serious problem for electronics used in defense and space systems for decades and radiation-hardened devices, circuits, and systems have been developed to meet the needs of these systems. However, many of the fundamental physical mechanisms responsible for radiation-induced degradation were not elucidated, which limits the ability to extend the hardening methods to future generations of technology. This MURI program combined recently developed atomic-scale computational techniques and physical-analysis tools with an engineering approach to analyzing radiation effects in electronics. The computational work focused on using density functional theory to understand problems such as the enhanced low dose rate sensitivity of irradiated bipolar junction transistors and the fundamental mechanisms responsible for interface-trap formation. Several experimental techniques, including second harmonic generation and cathodoluminescence spectroscopy, were adapted to analyzing radiation-induced defects. The radiation response of advanced technologies, including GaAs- and GaN-based transistors, vertical cavity surface emitting lasers, and ultrathin dielectrics, was evaluated experimentally.

All of these technologies appear promising for use in future defense and space systems

• Creator/s: Defense Technical Information Center
• Date: 4/7/2005
• Year: 2005
• Book Topics/Themes: DTIC Archive, Witt, Gerald L, VANDERBILT UNIV NASHVILLE TN DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE, *BIPOLAR TRANSISTORS, *RADIATION HARDENING, *RADIATION EFFECTS, SPACE SYSTEMS, PHYSICAL PROPERTIES, SECOND HARMONIC GENERATION, DEFECTS(MATERIALS), LOW LEVEL, CATHODOLUMINESCENCE, JUNCTION TRANSISTORS, DENSITY FUNCTIONAL THEORY

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