DTIC ADA514454: High Dielectrics on High Carrier pdf

DTIC ADA514454: High Dielectrics on High Carrier

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Description of the Book:

This is a project on nano-electronics, which achieved many firsts: full Fermi level unpinning in oxide-In0.2Ga0.8As, determined energy-band parameters at interfaces of high-k; atomic-layer-deposited (ALD) oxides on GaAs and InGaAs, and first to achieve inversion-channel GaN on MOSFET with ALD Al2O3 as gate dielectric

• Creator/s: Defense Technical Information Center
• Date: 2/19/2010
• Year: 2010
• Book Topics/Themes: DTIC Archive, , NATIONAL TSING HUA UNIV HSINCHU (TAIWAN) DEPT OF MATERIALS SCIENCE AND ENGINEERING, *GALLIUM ARSENIDES, *FERMI SURFACES, *GALLIUM NITRIDES, *COMPLEMENTARY METAL OXIDE SEMICONDUCTORS, *INDIUM GALLIUM ARSENIDES, *FIELD EFFECT TRANSISTORS, NANOSTRUCTURES, NANOTECHNOLOGY, METAL OXIDE SEMICONDUCTORS, SEMICONDUCTORS, MOLECULAR BEAM EPITAXY, DIELECTRICS

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