DTIC ADA588450: The 3D Stacking Bipolar RRAM pdf

DTIC ADA588450: The 3D Stacking Bipolar RRAM

More Book Details

Description of the Book:

For its simple structure, high density and good scalability, the resistive random access memory (RRAM) has emerged as one of the promising candidates for large data storage in computing systems. Moreover, building up RRAM in a three-dimensional (3D) stacking structure further boosts its advantage in array density. Conventionally, multiple bipolar RRAM layers are piled up vertically separated with isolation material to prevent signal interference between the adjacent memory layers. The process of the isolation material increases the fabrication cost and brings in the potential reliability issue. To alleviate the situation, we introduce two novel 3D stacking structures built upon bipolar RRAM crossbars that eliminate the isolation layers. The bi-group operation scheme dedicated for the proposed designs to enable multi-layer accesses while avoiding the overwriting induced by the cross-layer disturbance, is also presented. Our simulation results show that the proposed designs can increase the capacity of a memory island to 8K-bits (i.e., 8 layers of 32 x 32 crossbar array) while maintaining the sense margin in the worst-case configuration greater than 20% of the maximal sensing voltage

• Creator/s: Defense Technical Information Center
• Date: 6/1/2011
• Year: 2011
• Book Topics/Themes: DTIC Archive, , POLYTECHNIC INST OF NEW YORK BROOKLYN, *RANDOM ACCESS COMPUTER STORAGE, DATA STORAGE SYSTEMS, THREE DIMENSIONAL

An excerpt captured from the PDF book