DTIC ADP012942: Electric Field Induced Interference Impurity pdf

DTIC ADP012942: Electric Field Induced Interference Impurity

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The dramatic change of Si donor impurity ionization energy was experimentally found in GaAs/AlGaAs double well structure. This effect accompanies the rearrangement of electronic wave function in electric field. With less than 1 V variation of the bias on the structure the impurity ionization energy falls to zero from 15.5 meV. The Stark effect should cause the variation of this parameter no more than 3 meV

• Creator/s: Defense Technical Information Center
• Date: 6/18/1999
• Year: 1999
• Book Topics/Themes: DTIC Archive, Aleshchenko, Y. A., Kazakov, I. P., Kapaev, V. V., Kopaev, Y. V., Kornyakov, N. V., RUSSIAN ACADEMY OF SCIENCES MOSCOW (RUSSIA) LEBEDEV INST, *QUANTUM WELLS, COUPLING(INTERACTION), GALLIUM ARSENIDES, PHOTOLUMINESCENCE, IMPURITIES, ELECTROMAGNETIC RADIATION, SILICON, IONIZATION, RUSSIA, DOPING, WAVE FUNCTIONS, STARK EFFECT, MOLECULAR BEAM EPITAXY

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