NASA Technical Reports Server (NTRS) : Evidence pdf

NASA Technical Reports Server (NTRS) : Evidence_bookcover

NASA Technical Reports Server (NTRS) : Evidence

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The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) with two levels of metal interconnect is reported in another submission to this conference proceedings. While some circuits functioned more than 1000 hours at 500 C, the majority of packaged ICs from this wafer electrically failed after less than 200 hours of operation in the same test conditions. This work examines the root physical degradation and failure mechanisms believed responsible for observed large discrepancies in 500 C operating time. Evidence is presented for four distinct issues that significantly impacted 500 C IC operational yield and lifetime for this wafer

  • Creator/s: NASA Technical Reports Server (NTRS
  • Date: 10/4/2015
  • Year: 2015
  • Book Topics/Themes: NASA Technical Reports Server (NTRS), JFET, INTEGRATED CIRCUITS, WAFERS, TRANSISTOR CIRCUITS, FAILURE MODES, DEGRADATION, CRACK INITIATION, NOTCHES, IONIC MOBILITY, ELECTRONIC EQUIPMENT TESTS, FAILURE ANALYSIS, Spry, David J., Neudeck, Philip G., Liangyu, Chen, Evans, Laura J., Lukco, Dorothy, Chang, Carl W., Beheim, Glenn M

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