NASA Technical Reports Server (NTRS) : InP pdf

NASA Technical Reports Server (NTRS) : InP_bookcover

NASA Technical Reports Server (NTRS) : InP

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Both InP and GaAs surfaces were studied in parallel. A molecular spray technique was used to obtain two semiconductor surfaces with different superficial compositions. The structures of these surfaces were examined by electron diffraction. Electron energy loss was measured spectroscopically in order to determine surface electrical characteristics. The results are used to support conclusions relative to the role of surface composition in establishing a Schottky barrier effect in semiconductor devices

  • Creator/s: NASA Technical Reports Server (NTRS
  • Date: 12/1/1979
  • Year: 1979
  • Book Topics/Themes: NASA Technical Reports Server (NTRS), BAND STRUCTURE OF SOLIDS, GALLIUM ARSENIDES, INDIUM PHOSPHIDES, STOICHIOMETRY, SURFACE PROPERTIES, WORK FUNCTIONS, ELECTRIC CONTACTS, ELECTRICAL PROPERTIES, ELECTRON DIFFRACTION, EPITAXY, SEMICONDUCTOR DEVICES, Massies, J., Linh, N. T., Olivier, J., Faulconnier, P., Poirier, R

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